cmos devices meaning in Chinese
互补金属氧化半导体装置
Examples
- Development of cmos devices and circuits with sub - 0 . 1 m gate length
新型高频硅光电负阻器件的特性模拟及测试分析 - In this paper , ni - salicide process has been investigated intensively for the application to deep sub - micron coms devices . with the size of devices scaling , ni - salicide is more suitable for cmos devices than ti - salicide or co - salicide by improving salicide process
随着器件尺寸的进一步缩减，与传统的ti 、 co自对准硅化物相比， ni自对准硅化物更能适用于cmos器件对硅化物的要求。 - We have demonstrated that the integrated circuit test structures fabricated at standard commercial foundries can be radiation tolerant at total does greater than 100krad ( si ) . the radiation environment of outer space is capable of effecting cmos devices in three ways
外太空辐射环境主要以三种方式影响cmos器件：总剂量辐射效应( tid ) ，单粒子翻转效应( seu )和单粒子闩锁效应( sel ) 。 - As the technology entered the era of deep - submicron ( dsm ) technologies , the second order effects of cmos device are having more and more influence on the performance of the cmos logic circuits . this dissertation compared the performance of four popular logic families against mcml under dsm technology
随着工艺发展进入深亚微米时代， cmos器件的二阶效应对电路的性能产生着越来越重要的影响，论文首先对比讨论了mcml电路和其它各种常用逻辑电路在采用深亚微米器件时的性能表现。